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Sources
Silicon semiconductors are currently fabricated using an optical
lithography process
IC Line
features (circuit connecting line width) are limited by light wavelength
- 130nm today & using 248nm light
- 90nm planned by 2004, using 193nm light
- 65nm planned for 2007 using 157nm light – technology
is challenging
A Next
Generation Lithography (NGL) process for silicon semiconductor fabrication
is needed to reach industry goals of 45nm & 32nm (and possibly
even for 65nm)
- X-Ray Lithography (XRL) is a candidate
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AASC has developed a compact, modular x-ray source that could
displace deep UV lasers and EUV sources
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| For more information, contact
Mahadevan Krishnan @ 510-483-4156 x202 or
general@aasc.net |
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